? 2005 ixys all rights reserved 1 - 2 0520 dgs 13-025cs dgsk 28-025cs ixys reserves the right to change limits, conditions and dimensions. v rrm = 250 v i dc = 21 a c junction = 15 pf gallium arsenide schottky rectifier second generation data according to iec 60747 and per diode unless otherwise specified features gaas schottky diode with enhanced barrier height: ? lowest operating forward voltage drop due to additional injection of minority carriers high switching speed - low junction capacity of gaas diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off surface mount packages: incorporating single and dual diode topologies industry standard package outlines epoxy meets ul 94v-0 applications switched mode power supplies: ac-dc converters dc-dc converters with: high switching frequency high efficiency low emi for use e. g. in: telecom computer automotive equipment symbol conditions characteristic values min. typ. max. v f i f = 7.5 a; t vj = 25c 1.4 1.7 v i f = 7.5 a; t vj = 125c 1.2 v i r v r = v rrm ;t vj = 25c 0.25 ma v r = v rrm ;t vj = 125c 0.25 ma i rm i f = 10 a; -di f /dt = 400 a/s; 2.7 a t rr v r = 100 v; t vj = 125c 18 ns c j v r = 100 v; t vj = 125c 15 pf r thjc 4.4 k/w symbol conditions maximum ratings v rrm/rsm 250 v i fav t c = 25 c; dc 21 a i fav t c = 90 c; dc 14 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 80 a p tot t c = 25 c34w diode component symbol conditions maximum ratings t vj -55...+175 c t stg -55...+150 c symbol conditions characteristic values min. typ. max. weight to-252 0.3 g to-263 2 g a to-252 aa a tab type marking on product circuit package dgs 13-025cs 13a250as dgsk 28-025cs dgsk 28-025cs common cathode aca ac single to-263 ab a a tab a = anode, tab = cathode
? 2005 ixys all rights reserved 2 - 2 0520 dgs 13-025cs dgsk 28-025cs ixys reserves the right to change limits, conditions and dimensions. 0.00.51.01.52.0 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 t s k/w 0.1 1 10 100 1000 10 100 c j i f a v f v r v pf v z thjc t vj = 125c 200 30 single pulse t vj = 125c 25c to-252 to-263 DGS13-025CS fig. 1 typ. forward characteristics fig. 2 typ. junction capacity versus blocking voltage fig. 3 typ. thermal impedance junction to case outlines to-252 aa outlines to-263 ab 1. gate 2. collector 3. emitter 4. collector dim. m illimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .315 .350 e 9.65 10.29 .380 .405 e1 6.22 8.13 .245 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.20 0 .008 r 0.46 0.74 .018 .029 dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1 anode 2 nc 3 anode 4 cathode
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